Grid modeling

Curvature compensation

Heat release

Video overlay

In Situ microscope

New operating system dropdown

Advanced settings for digital zoom

Image capture timer and endpoint

Video capture curve and grid model

Loading and saving image enhancement formula

Standard configuration includes two 4K (UHD) cameras. Add a third 4K (UHD) microscope camera at the RST measurement location. It can be used with the newly added UT-F3 spectrometer.

Image overlay

The real-time view can be overlaid with saved X-ray or C-Sam images to further improve target localization.

Automatic lubrication system

Can be used for distributing and collecting polishing fluid, abrasives, and lubricants. The effective control of lubricating oil and particles greatly improves the quality of visual monitoring in the machining process.

In Situ RST spectrometer

There are two options available for measuring the remaining silicon thickness (RST) in In Situ.

5-point tilt and curve measurement

Interactive curve and grid controls

The new 4. X operating system provides users with interactive drawing to compare actual RST images with 3D models. This figure considers the three-dimensional mesh generated by surface contour, programmed X&Y curvature, and convolution generated by polishing drill bits due to their size and type.

After subsequent polishing iterations accompanied by modifications to the mesh model, the actual sample thickness and uniformity were approximated to the optimized model after final polishing.

Starting point - Initial thinning

Chip size X=15 mm Y=10 mm

5260.3 3mm diameter fine diamond tool

Spiral polishing pattern

Heat release at 80 ° C

Curvature compensation

Tool force=300g

50 micron process midpoint

Chip target camera view @ 50 microns+/-5

RST point contour map

RST diagram

Standard thinning range (50 microns to 20 microns)

Note: The selected image calculates tool convolution to minimize radius error. In this case, a 3mm tool was chosen.

Process conditions

5260.3mm diameter fine diamond cutting tool

5265.3mm diameter ultra-fine diamond cutting tool

Combination spiral and ASAP-1 polishing pattern

Curvature compensation

Polishing force=300g

Super thinning and polishing - adaptive (20 microns to 5 microns)

Note: Additional polishing may be required. Measure RST and refine the 3D mesh after each cycle.

Process conditions5295.3 3mm直径Xylem刀具

2382.5 Blue Diamond Gypsum

2385.5 Yellow Diamond Gypsum

ASAP-1 series polished patterns

Polishing force=300g

Use 5299.3 Xybove 3mm cutting tool and silicon oxide/oxide

Aluminum undergoes final polishing

Final result

Total processing time=2 to 4 hours

Heat release

The thermal modification of InSitu during sample preparation has long been proven to be a safe and effective method and tool for optimizing the uniformity of extreme silicon chips. Heat release can be used alone or in combination with curvature compensation and 3D mesh methods more frequently.

Hot table (6686.1) is a standard upgrade of ASAP-1 InSitu. It also adopts a hot plate mode for fixing/removing samples with crystal wax.

The stripe pattern on the same device prepared by Moir é at an increase in temperature shows an increase in final thickness uniformity.

Terminal technology

Except for a series of processes based on time and pressure. ASAP-1 InSitu provides a unique set of electronic endpoint functions derived from capacitance/resistance.

By grounding the parts to the optional endpoint sample stage, the capacitance accumulation between the charged diamond tool and the embedding characteristics of interest (chip circuit, solder wire) can be used as an automatic termination function for the chip opening process.

This method can achieve fast, accurate, and reproducible endpoint processes without the need to spend time using optical microscopes.

The stripe pattern on the same device prepared by Moir é at an increase in temperature shows an increase in final thickness uniformity.