86-18912625555

iPHEMOS-MPX

iPHEMOS-MPX  is a high-resolution micro light microscope that can locate failure locations by detecting weak light and heat emitted by defects in semiconductor devices.

Can install two ultra-high sensitivity cameras

Up to 4 OBIRCH, DALS, EOP, and laser marking light sources can be installed

Up to 4 OBIRCH, DALS, EOP, and laser marking light sources can be installed

High precision stage designed specifically for advanced devices

Advantages

Can install two ultra-high sensitivity cameras

By covering different emission analysis and thermal analysis detection wavelength ranges, it is easy to choose analysis techniques that match the sample and fault mode.


Up to 4 OBIRCH, DALS, EOP, and laser marking light sources can be installed


High sensitivity macro lens and up to 10 lenses, suitable for each detector sensitivity wavelength

High sensitivity macro lens and up to 10 lenses, suitable for each detector sensitivity wavelength

X60 mm
Y60 mm
Z60 mm

*Due to the use of probe stations and interference from sample stations or NanoLens installations, the working range may be narrower than these values.


Basic display function

Overlay display/contrast enhancement function

s-phemos-x-pf4-xx.jpeg

iPHEMOS-MPX overlays low light images onto high-resolution pattern images to quickly locate defect points.   The contrast enhancement function makes the image clearer and more delicate.

The contrast enhancement function makes the image clearer and more delicate.

Display function

Comment: Comments, arrows, and other indicators can be displayed anywhere on the image as needed.

Scale display: The scale width can be displayed in segments on the image.

Grid display: Vertical and horizontal grid lines can be displayed on the image.

Thumbnail display: Images can be stored as thumbnails and called, and image information such as stage coordinates can be displayed.

Split screen display: It can display pattern images, low light images, overlay images, and reference images all at once on a 6-window screen.

1767598047937821.png

TD Imaging

TD Imaging (optional) is a new technology suitable for identifying defects in complex structured semiconductors such as logic semiconductors. It can accurately locate defects through internal metal semiconductors.


Specifications
SizeHost: 1654 mm (W) × 1541 mm (H) × 1200 mm (D) * 1, approximately 1100 kg * 2
System/Instrument Rack: 880 mm (W) × 1841.5 mm (H) × 715 mm (D) * 1, approximately 300 kg
Console * 3: 1000 mm (width) x 700 mm (height) x 800 mm (depth), approximately 39.2 kg (C16216-01 console)/1480 mm (width) x 700 mm (height) x 800 mm (depth), approximately 48.6 kg (C16216-02 console)
Line voltageSingle phase 200 V to 240 V
Power consumptionApproximately 3300 VA
Degree of vacuumAt least 80 kPa
Compressed air * 40.5 MPa ~ 0.7 MPa

*1: Excluding protruding parts
*2: Including a sample stage
*3: Options
*4: Including regulators