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Hamamatsu Micro Light Microscope

PHEMOS-X is a high-resolution light emission microscope that accurately locates the fault location of semiconductor devices by detecting weak light and thermal emissions caused by defects in the devices. Due to the fact that PHEMOS-X can be used in conjunction with universal probes, various analytical tasks can be performed using sample settings that you are already familiar with. Install an optional laser scanning system to obtain high-resolution morphological images. Different types of detectors can be used for various analysis techniques, such as EMMI, Thermal, and IR OBIRCH analysis. PHEMOS-X supports a variety of samples and applications, from circuit board circuits to large-sized 300mm wafers.

The PHEMOS-X is a high-resolution micro-luminescence microscope capable of locating failure sites by detecting faint light and heat emitted from semiconductor device defects.

Two ultra-high sensitivity cameras can be installed

Up to 7 OBIRCH, DALS, EOP, and laser marking light sources can be installed

High precision stage designed specifically for advanced equipment

iPHEMOS-MPX  is a high-resolution micro light microscope that can locate failure locations by detecting weak light and heat emitted by defects in semiconductor devices.

Can install two ultra-high sensitivity cameras

Up to 4 OBIRCH, DALS, EOP, and laser marking light sources can be installed

Up to 4 OBIRCH, DALS, EOP, and laser marking light sources can be installed

High precision stage designed specifically for advanced devices

Dual PHEMOS-X is designed specifically for advanced 3D non transparent devices, where optical fault analysis may need to be performed simultaneously on both sides (top and bottom) at the wafer or chip level.

● Analysis on both sides

● It is easy to switch between top fault analysis and bottom fault analysis without moving the device to another system/instrument.