Core technology (cold field emission electron source)

The latest Hitachi High Tech company officially launched a cold field emission electron source in 1972, greatly improving observation resolution. Over the years, we have been dedicated to technological innovation and have never stopped. The instrument adopts the latest electronic gun, which can stably emit electron beams even in high brightness areas. The SU8600 series can obtain high signal-to-noise ratio images even at low acceleration voltages, and the instrument supports long-term testing and high current analysis.

Comparison of SEM Electron Gun Performance

	Cold field emission electron source	Thermal field emission electron source
Electron beam diameter (nm)	5	20
Energy Range (eV)	0.2~0.3	0.6~1.0
Brightness (A/cm2/sr)	108	1078

Core Technology (ExB)

After forming an orthogonal electric and magnetic field (ExBField) above the objective lens, secondary electrons can be efficiently detected without changing the motion trajectory of the incident electrons. Therefore, even with extremely small probe currents, high signal-to-noise ratio and high contrast images can be obtained.

Core Technology (SuperExB)

The signal mixing and separation function is a significant feature of Hitachi High Tech's products. By adjusting the voltage of the control electrode in the objective lens, the electrons (secondary electrons or backscattered electrons) reaching the detector can be controlled. Users can obtain a mixed image of secondary electrons and backscattered electrons, easily obtaining the required information.

● Adopting a new type of cold field emission electron gun with high brightness and stability to achieve ultra-high resolution observation.

● Multiple new detectors are available for selection to meet different application scenarios. (IMD,CLD,PD-BSED,OCD)

Rich detector selection, more information acquisition.

Automatic electronic optical path alignment

EM Flow Creator*

EMFlowCreator allows customers to create automated workflows for continuous image acquisition.

EMFlowCreator defines different SEM functions as graphical modules, such as setting magnification, moving sample position, adjusting focal length, and contrast between light and dark.

Users can form a working program by simply dragging and dropping these modules in logical order. After debugging and confirmation, the program can automatically obtain high-quality and reproducible image data every time it is called.

             

User interface of EM FlowCreator

*

Example of the workflow of EM Flow Creator

Shoot defects in semiconductor devices:

1. Automatically set SEM observation conditions and move to the reference position.

2. Automatically read the coordinate position recorded in the CSV file and move it to a corner of the SRAMmat area accordingly.

3. Automatically read the coordinate position recorded in the CSV file, move to the defect point, and change the magnification.

*High precision coordinate movement requires the use of a piezoelectric ceramic sample stage

Potential Contrast of 5nm Process SRAM

Potential contrast imaging is one of the effective methods for visualizing defects in semiconductor devices. The above image is an observation example of a Contact plug in the SRAM area of a 5nm process. The left image shows the connection layer of w captured using a 0.5kV UD detector, and the right image shows the connection layer of Co-W captured using a 0.3kV TD detector deceleration mode. Choosing appropriate SEM observation conditions can greatly improve the efficiency of obtaining target information in specific samples, such as adjusting landing voltage, switching appropriate detectors and detection conditions, etc.

3D NAND cross-section observation

Left image: Overall 3D NAND cross-section image
           Right image: Partial enlarged image. Under low acceleration voltage conditions of 1.5 kV, the backscattered electron signal can clearly show the contrast difference between the silicon oxide layer and the silicon nitride layer.

Internal structure of 5 nm process SRAM

Left image: The internal structure of Fin FET can be observed. Due to the use of a new type of OCD detector, clear structural images can still be observed even if the photography time is less than 1 second.
           Right image: Partially enlarged, the image obtained at normal scanning speed shows excellent signal-to-noise ratio.

Surface microstructure of RHO zeolite

The above is an example of observing RHO zeolite under 0.8kV voltage conditions. The left image shows the overall morphology of the particles, and the right image is an enlarged image. The fine step structure on the surface of the particles is clearly visible. Low voltage observation is more effective in reducing electron beam damage and obtaining surface shape information.

Sample provided by Mr. Yoshida Kamimura from the Japan Institute of Industrial Technology

Self assembling iron oxide (Fe3O4) magnetic nanoparticles

Left image: Neatly arranged self-assembled magnetic nanoparticles of iron oxide
           Right image: x800k magnification of the local area, allowing for clear observation of the fine structure on the surface of particles with a diameter of 12nm.

Sample provided: Electrical Computer Engineering Department National University of Singapon

Surface Structure and Composition of Capacitive Materials

SEM observation of tantalum coating fracture on the surface of capacitor materials. The above image is obtained simultaneously by UD and TD channels, which can simultaneously record surface and component information.

The ultrastructure of mustard leaves in the south of China

The above image shows the backscattered electron image of ultra-thin slices of mustard leaves in the southern region.
         Using a low acceleration voltage of 2kV, an image similar to a TEM image was obtained.
       By using energy filtered BSE signals, the ultrastructure of the capsule membrane and other structures can be clearly observed (as shown in the figure on the right).

Sample provided by Mr. Feng Gang from the Environmental Resources Science Research Center and the Institute of Physical Chemistry

Large field of view/high pixel image of rat cerebral cortex

The left image is a high-resolution image of a rat ultra-thin slice sample collected in a single scan with a field of view of approximately 60um.
         Enlarge the yellow rectangular area image with simple numbers to obtain the middle image. Continue to enlarge the yellow box in the middle image to obtain the image on the right.
         The image on the right is equivalent to a 12 fold digital magnification of the original image on the left, and the internal structure of nerve cell organelles can still be clearly confirmed.
       The SU8600 supports high-resolution images up to 40960x30720 pixels in a single scan, as shown above, allowing for a large field of view and high-resolution images.

Surface microstructure of RHO zeolite

The above is an example of observing RHO zeolite under 0.8kV voltage conditions. The left image shows the overall morphology of the particles, and the right image is an enlarged image. The fine step structure on the surface of the particles is clearly visible. Low voltage observation is more effective in reducing electron beam damage and obtaining surface shape information.

Sample provided by Mr. Yoshida Kamimura from the Japan Institute of Industrial Technology

Self assembling iron oxide (Fe3O4) magnetic nanoparticles

Left image: Neatly arranged self-assembled magnetic nanoparticles of iron oxide
       Right image: x800k magnification of the local area, allowing for clear observation of the fine structure on the surface of particles with a diameter of 12nm.

Provided by Xiangpin: Electrical Computer Engineering Department National University of Singapon

Surface Structure and Composition of Capacitive Materials

SEM observation of tantalum coating fracture on the surface of capacitor materials. The above image is obtained simultaneously by UD and TD channels, which can simultaneously record surface and component information.

Supports dual displays, displaying 6 channels simultaneously

Channel 1, 2, 4, or 6 signals can be displayed simultaneously on the same monitor, with switchable content including SEM detectors, sample chamber cameras, and navigation cameras.
       The workspace can be expanded by using two displays, and the customizable user interface can improve work efficiency.

Sample Room and Interface

The sample exchange room can accommodate samples with a maximum diameter of 150mm. There are multiple EDS installation interfaces in the sample room.
       (The photo includes optional items)

*Optional selection

Installation layout